Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 46W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 79A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.65nF
Recovery Time 29 ns
Drain to Source Resistance 4.5mOhm
Rds On Max 4 mΩ
Nominal Vgs 2.35 V