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BOM Tool

IRFH5302DTR2PBF

Part No IRFH5302DTR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - Single
PDF
rohs

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Ask for an estimation
Supplier Lead-Time Call for availability
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$3.32157
$3.322
10+
$3.133561
$31.336
100+
$2.95618
$295.618
500+
$2.788856
$1394.428
1000+
$2.630996
$2630.996
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: In Stock pieces
MOQ: 1 pcs
Order Increment : 1 pcs
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Products specifications

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package PQFN (5x6) Single Die

Technical

Packaging Cut Tape (CT)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.6W
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 104W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3635pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 3.635nF
Recovery Time 29 ns
Drain to Source Resistance 2.5mOhm
Rds On Max 2.5 mΩ
Nominal Vgs 2.35 V

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant

Description

MOSFET N-CH 30V 29A 8VQFN

Contact Us

10,000+

Daily Order Quantity

5000,000+

Alternative Parts

2800+

Worldwide Manufacturers

32,000m²

In-stock Warehouse

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