Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2016
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 66W
Base Part Number SIZ902
JESD-30 Code R-PDSO-N6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 29W 66W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 16 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate