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Certifications
BOM Tool

SQJ910AEP-T1_GE3

Part No SQJ910AEP-T1_GE3
Manufacturer
Catalog Transistors - FETs, MOSFETs - Arrays
PDF
rohs

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Ask for an estimation
Supplier Lead-Time Call for availability
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$5.063387
$5.063
10+
$4.77678
$47.768
100+
$4.5064
$450.64
500+
$4.251315
$2125.658
1000+
$4.010677
$4010.677
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: In Stock pieces
MOQ: 1 pcs
Order Increment : 1 pcs
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Products specifications

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 48W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1869pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 42 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Description

MOSFET Dual N-Channel 30V AEC-Q101 Qualified

Contact Us

10,000+

Daily Order Quantity

5000,000+

Alternative Parts

2800+

Worldwide Manufacturers

32,000m²

In-stock Warehouse

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