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Certifications
BOM Tool

ZXMN3A06DN8TA

Part No ZXMN3A06DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - Arrays
PDF
rohs

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Ask for an estimation
Supplier Lead-Time Call for availability
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$0.744897
$0.745
10+
$0.702728
$7.027
100+
$0.662953
$66.295
500+
$0.625427
$312.714
1000+
$0.59003
$590.03
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: In Stock pieces
MOQ: 1 pcs
Order Increment : 1 pcs
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Products specifications

Supply Chain

Factory Lead Time 17 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 35mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 30V
Max Power Dissipation 2.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4.8A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Turn On Delay Time 3 ns
Power - Max 1.8W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.9A
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Rise Time 6.4 ns
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 21.6 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Description

MOSFET 2N-CH 30V 4.9A 8-SOIC

Contact Us

10,000+

Daily Order Quantity

5000,000+

Alternative Parts

2800+

Worldwide Manufacturers

32,000m²

In-stock Warehouse

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