Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series BIMOSFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXB*42N170
Pin Count 247
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.9V
Max Collector Current 57A
Reverse Recovery Time 1.32 μs
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 224 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 42A
Turn Off Time-Nom (toff) 1070 ns
Gate Charge 188nC
Current - Collector Pulsed (Icm) 300A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V