Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 170W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 170W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 62 ns
Test Condition 480V, 40A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 198 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 260A
Td (on/off) @ 25°C 24ns/70ns
Switching Energy 830μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V