Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series BIMOSFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 50A
Reverse Recovery Time 1.35 μs
Collector Emitter Breakdown Voltage 3kV
Voltage - Collector Emitter Breakdown (Max) 3000V
Turn On Time 608 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 20A
Turn Off Time-Nom (toff) 695 ns
Gate Charge 105nC
Current - Collector Pulsed (Icm) 140A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V