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Certifications
BOM Tool

IRF1104LPBF

Part No IRF1104LPBF
Manufacturer
Catalog Transistors - FETs, MOSFETs - Single
rohs

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Ask for an estimation
Supplier Lead-Time Call for availability
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1+
$34.669876
$34.67
10+
$32.707435
$327.074
100+
$30.856064
$3085.606
500+
$29.109497
$14554.749
1000+
$27.461787
$27461.787
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: In Stock pieces
MOQ: 1 pcs
Order Increment : 1 pcs
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Products specifications

Supply Chain

Factory Lead Time [object Object]

Physical

Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-262AA
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 350 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 170W

Compliance

RoHS Status RoHS Compliant

Description

N-CHANNEL SINGLE WITH BUILT-IN DIODE AVALANCHE RATED HIGH RELIABILITY ULTRA LOW RESISTANCE EAR99 Mosfet Transistor 100A 170W 40V 0.009Ohm

Contact Us

10,000+

Daily Order Quantity

5000,000+

Alternative Parts

2800+

Worldwide Manufacturers

32,000m²

In-stock Warehouse

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